Gas Sensing Studies of Tin Oxide Thin Films Annealed at Different Temperatures

K. S. Thakare, S. J. Patil, R. R. Ahire


Thin films of Tin oxide (SnO2) were prepared by physical vapour deposition method. The as-prepared films were further annealed at 300°C, 400°C and 500°C to study the effect of annealing on the physical as well as gas sensing properties of the thin films. Gas sensing performance of annealed SnO2 thin films was studied for different gases having different concentrations at working temperature of 250°C. Significantly, gas response changes for SnO2 samples annealed at different temperatures, which is discussed herein.


SnO2 Thin films, PVD technique, XRD, FESEM, EDAX, gas sensing

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