This work presents a study of the influence of temperature on the series and shunt resistance of a silicon solar cell under polychromatic illumination. First, a theoretical study allowed us to give the expression of the density of minority carriers. From this expression of the minority carrier density, we determined the expression of the current density and the photovoltage. The expressions of the short circuit current density and the open circuit voltage were also determined. Under polychromatic illumination and temperature, we find that the short circuit current Icc and the open circuit voltage Vco have quasi-linear behaviour. The results obtained show that the series resistance Rs is of the type with a positive temperature coefficient, while the shunt resistance Rsh is of the type with a negative temperature coefficient.