Email this article This paper is reviewed in accordance with the Peer Review Program of IRA Academico Research
Influence of Temperature on the Serial and Shunt Resistance of a Silicon Solar Cell under Polychromatic Illumination in Static Mode
Abstract
This work presents a study of the influence of temperature on the series and shunt resistance of a silicon solar cell under polychromatic illumination. First, a theoretical study allowed us to give the expression of the density of minority carriers. From this expression of the minority carrier density, we determined the expression of the current density and the photovoltage. The expressions of the short circuit current density and the open circuit voltage were also determined. Under polychromatic illumination and temperature, we find that the short circuit current Icc and the open circuit voltage Vco have quasi-linear behaviour. The results obtained show that the series resistance Rs is of the type with a positive temperature coefficient, while the shunt resistance Rsh is of the type with a negative temperature coefficient.
Keywords
Full Text:
PDFReferences
A.W. Blakers, J. Zhao, A. Wang, A.M. Milne, X. Dai and M.A. Green, (1989) ‘23% Efficient Silicon Solar Cell’, Proceedings of the 9th European Communities Photovoltaic Solar Energy Conference, Freiburg, Germany, September, pp. 328–329.
D.M. Huljié, E. Hirth, R. Ludemann and G. Willeke, (2002) ‘Large Area Crystalline Silicon Solar Cells with Pad Printed Front -Side Metallization’, Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, Germany, pp. 1582– 1585.
A.L. Endrös, R. Einzinger and G. Martinelli, (1997). Tri-silicon: a Novel Substrate for Thin Wafer Solar Cells’, Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain, pp. 112-114.
W. van Roosbroeck, “The Transport of Added Current Carriers in a Homogeneous Semiconductor”, Phys. Rev. 91, 2, July 1953.
L. Q. Nam, R.M., J. Nijs, M. Ghannam and J. Coppye, (1992), “Spectral response of solar cells of high efficiency multicrystalline silicon”. J. Appl. Phys., 2(7), pp: 1305-1316.
H. W. Kraner. (1983), “Radiation damage in silicon detectors”.2nd Pisa Meeting on Advanced Detector, Grosetto, Italy, June 3-7
M. Kunst and A. Sanders, “Transport of excess carriers in silicon wafers” Semiconducteurs Sciences and Technology, 7, pp: 51-59, 1992.
Skoplaki E., Palyvos J. A., (2009). On the Temperature Dependence of Photovoltaic Module Electrical Performance: A review of efficiency/power correlations, Science-Direct, Elsevier, Solar Energy, 83 (83), p. 614–624.
D. L. Pulfrey, (2010), Understanding Modern Transistors and Diodes. Cambridge University Press, pp:330.
B. Dione, M. F. Thiam P. T. Traore, M. Dieng (2021): Influence of temperature and magnetic field on the capacity and power of a silicon solar cell under polychromatic illumination in static conditions, Journal of Scientific and Engineering Research, Vol. 8, Issue 06 p: 56-84.
B. Dione, M. Dieng, F. Ba, P. T. Traore, (2021), Study of the recombination speed at the rear face of a silicon solar cell under polychromatic illumination: Effect of depth and temperature with matlab / simulink. Current Trends in Technology and Science, Vol. 10, Issue 05 ISSN 2279-0535 p: 1000-1007.
M.I.Ngom, B.Zouma, M. Zoungrana, M.Thiame, Z.N. Bako, A.G.Camara,and G.Sissoko (2012) “Theoretical study of a parallel vertical multijunction silicon cell under multispectral illumination: influence of external magnetic field on the electrical parameters”. International Journal of Advanced Technology & Engineering Research, Volume 2, Issue 6, Nov.
G.Sissoko, C. Museruka, A. Corréa, I. Gaye, A. L. Ndiaye, (1996), “Light spectral effect on recombination parameters of silicon solar cell”, World Renewable Energy Congress, part III, pp.1487-1490
M.M. Dione, H. Ly Diallo, M. Wade, I. Ly, M. Thiame, F. Toure, A. GueyeCamara, N. Dieme, Z. Nouhou Bako, S. Mbodji, F. I Barro, G. Sissoko, ( 2011) “Determination of the shunt and series resistances of a vertical multijunction solar cell under constant multispectral light”, 26th European Photovoltaic Solar Energy Conference and Exhibition 5-9
Furlan, J. and Amon, S. (1985) Approximation of the Carrier Generation Rate in Illuminated Silicon. Solid State Electronics, 28, pp1241-1243.
N.D. Arora, J. R. Hauser, D. J. Roulston (1982). Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE. Trans. Electron devices, vol. ED-29, pp.292-295R. L. Streever; J. T. Breslin and E. H. Ahlstron (1980). Surface states at the n-GaAs-SiO2 interface from conductance and capacitance measurements. Solid State Electronics Vol. 23, pp. 863-868
H.L. Diallo, A. Seïdou. Maiga, A. Wereme, and G. Sissoko, (2008). “New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell” Eur. Phys. J. Appl. Phys. 42, pp: 203–211
Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko (2012). Electric equivalent models of intrinsic recombination velocities of a bifacial silicon solar cell under frequency modulation and magnetic field effect. Research Journal of Applied Sciences, Engineering and Technology Vol. 4, (22): 4646-4655
T. Flohr, and R. Helbig, (1989), Determination of minority carrier lifetime and surface recombination velocity by optical-beam-induced-current measurements at different light wavelengths. J. Appl. Phys., 66(7), pp: 3060-3065.
B. Dione, M. F. Thiam, S. Faye, M. Dieng (2021): Study of a silicon cell under dynamic frequency regime: Effect of irradiation energy on the surface recombination rate Sb with matlab/Simulink, European Journal of Advances in Engineering and Technology, Vol. 08, Issue 6, p:1-7
S. Madougou, F. Made, M. S. Boukary, and G. Sissoko (2007) “I –V Characteristics For Bifacial Silicon Solar CellStudied Under a Magnetic Field”; Advanced Materials Research Vols. 18-19 pp. 303-312.
B. Dione, P. T. Traore, M. F. Thiam, D. Diao (2021): Study of a silicon solar cell in dynamic frequency regime: Effect of temperature and irradiation energy on surface recombination rate Sb with matlab / simulink, International Journal of Engineering Sciences & Research Technology (IJESRT), Vol. 10, Issue 6 p:74-81
H. L. Diallo, B. Dieng, I. Ly, M.M. Dione, M. Ndiaye, O.H. Lemrabott, Z.N. Bako, A. Wereme and G. Sissoko (2012) Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell. Research Journal of Applied Sciences, Engineering and Technology, 4, pp: 2626-2631.
A. Dieng, N. Thiam, A. Thiam, A.S. Maiga and G. Sissoko (2011). Magnetic Field Effect on the Electrical Parameters of a Polycrystalline Silicon Solar Cell, Research Journal of Applied Sciences, Engineering and Technology ISSN 2040-7467 vol 3 n°7 602-611
C.Longeaud, J.P.Kleider, (1992). General analysis of the modulated-photocurrent experiment, including the contribution of holes and electrons. Physical Review B, Vol. 45, N0 20, Part 1, pp. 355-358
El-Adawi, M.K. and I.A. Al-Nuaim, (2002). “A method to determine the solar cell series resistances from a single I-V characteristic curve considering its shunt resistance-new approach”. Vaccum, 64, pp: 33-36.
I. Tall, B. Seibou, M.A.O.E. Moujtaba, A. Diao, M. Wade and G. Sissoko, (2015), “Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit”. International Journal of Engineering and Technology Trends (IJETT), 19, pp: 56-61.
G. Sissoko, E. Nanéma, A. Corréa, P. M. Biteye, M. Adj, A. L. Ndiaye (1998). Silicon Solar cell recombination parameters determination using the illuminated I-V characteristic. Renewable Energy, vol-3, pp.1848-51- Elsevier Science Ltd.
This article is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. This article can be used for non-commercial purposes. Mentioning of the publication source is mandatory while referring this article in any future works.
